tsop21..uh1f document number 81583 rev. 1.0, 20-nov-06 vishay semiconductors www.vishay.com 1 16661 3 2 1 ir receiver modules for remote control systems description the tsop21..uh1f - series are miniaturized receiv- ers for infrared remote control systems. pin diode and preamplifier are assembled on lead frame, the epoxy package is designed as ir filter. the demodulated output signal can directly be decoded by a microprocessor. the main benefit is the reliable function even in disturbed ambient and the protection against uncontrolled output pulses. features ? photo detector and preamplifier in one package ? internal filter for pcm frequency ? improved shielding against electrical field disturbance ? ttl and cmos compatibility ? output active low ? low power consumption ? high immunity against ambient light ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec special features ? enhanced data rate of 4000 bit/s ? suitable burst length 6 cycles/burst ? enhanced suppression of disturbance signals by special filtering parts table part carrier frequency tsop2130uh1f 30 khz tsop2133uh1f 33 khz tsop2136uh1f 36 khz TSOP2137UH1F 36.7 khz tsop2138uh1f 38 khz tsop2140uh1f 40 khz tsop2156uh1f 56 khz block diagram application circuit 25 k 2 3 1 v s out demo- g n d pass agc inp u t pi n band d u lator control circ u it 16 8 34 c 1 = 4.7 f tsopxxx x out g n d circ u it c r 1 = 100 + v s g n d transmitte r w ith tsalxxxx v s r 1 and c recommended to s u ppress po w er s u pply dist u r b ances. v o 16 8 42 the o u tp u t v oltage sho u ld not b e hold contin u o u sl ya a v oltage b elo w v o = 3. 3v b y the external circ u it . 1 e3
www.vishay.com 2 document number 81583 rev. 1.0, 20-nov-06 tsop21..uh1f vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified electrical and opti cal characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol v alue unit supply v oltage (pin 2) v s - 0.3 to + 6.0 v supply current (pin 2) i s 5ma output v oltage (pin 1) v o - 0.3 to + 6.0 v output current (pin 1) i o 5ma junction temperature t j 100 c storage temperature range t stg - 25 to + 85 c operating temperature range t amb - 25 to + 85 c power consumption (t amb 85 c) p tot 50 mw soldering temperature t < 5 s t sd 260 c parameter test condition symbol min ty p. max unit supply current (pin 2) v s = 5 v , e v = 0 i sd 0.8 1.1 1.5 ma v s = 5 v , e v = 40 klx, sunlight i sh 1.4 ma supply v oltage (pin 2) v s 4.5 5.5 v transmission distance e v = 0, test signal see fig. 3, ir diode tsal6200, i f = 250 ma d35m output v oltage low (pin 1) i ol = 0.5 ma,e e = 0.7 mw/m 2 , f = f o , test signal see fig. 1 v ol 250 m v minimum irradiance (30 - 40 khz) pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig. 3 e e min 0.2 0.4 mw/m 2 minimum irradiance (56 khz) pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig. 3 e e min 0.3 0.5 mw/m 2 maximum irradiance test signal see fig. 1 e e max 30 w/m 2 directivity angle of half transmission distance ? 1/2 45 deg
tsop21..uh1f document number 81583 rev. 1.0, 20-nov-06 vishay semiconductors www.vishay.com 3 typical characteristics t amb = 25 c, unless otherwise specified figure 1. output function figure 2. pulse length and sens itivity in dark ambient figure 3. output function e e t t pi *) t v o v oh v ol t po 2) t 14337 optical test si g nal (ir diode tsal6200, i f = 0.4 a, n = 6 p u lses, f = f 0 , t = 10 ms) output si g nal t d 1) 1) 3/f 0 < t d < 9/f 0 2) t pi - 4/f 0 < t po < t pi + 6/f 0 *) t pi 6/fo is recommended for optimal f u nction t - o u tp u t p u lse w idth (ms) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.1 1.0 10.0 100.0 1000.0 10000.0 e e - irradiance (m w /m2) 16907 po inp u t b u rst d u ration = 950 nm, optical test signal, fig.1 o u tp u t p u lse e e t v o v oh v ol t 600 s 600 s t = 60 ms t on t off 94 8 134 optical t est si g nal output si g nal , (see fig. 4) figure 4. output pulse diagram figure 5. frequency dependence of responsivity figure 6. sensitivity in bright ambient t ,t - o u tp u t p u lse w idth (ms) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 0.1 1.0 10.0 100.0 1000.0 10000.0 e e - irradiance (m w /m 2 ) 16910 toff = 950 nm, optical test signal, fig. 3 ton on off 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 0.7 0.9 1.1 1.3 f/f 0 - relati v e fre qu ency 16926 f (3 db) = f 0 /7 e /e - rel. responsi v ity e min f = f 0 5 % e 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 0.10 1.00 10.00 100.00 e - am b ient dc irradiance ( w /m 2 ) 16911 correlation w ith am b ient light so u rces: 10 w /m 2 1.4 klx (std.ill u m.a, t= 2 8 55 k) 10 w /m 2 8 .2 klx (daylight, t = 5900 k) am b ient, = 950 nm e - threshold irradiance (m w /m ) e min 2
www.vishay.com 4 document number 81583 rev. 1.0, 20-nov-06 tsop21..uh1f vishay semiconductors figure 7. sensitivity vs. supply v oltage disturbances figure 8. sensitivity vs. el ectric field disturbances figure 9. max. envelope duty cycle vs. burstlength 0.0 0.5 1.0 1.5 2.0 0.1 1.0 10.0 100.0 1000.0 v srms - ac voltage on dc s u pply voltage (mv) 16912 f = f o f = 10 khz e - threshold irradiance (m w /m2) e min f = 1 khz f = 100 hz e - threshold irradiance (m w /m2) 0.0 0.4 0. 8 1.2 1.6 0.0 0.4 0. 8 1.2 2.0 e - field strength of dist u r b ance (kv/m) 2.0 94 8 147 1.6 e min f(e) = f 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 0204060 8 0 100 120 b u rst length (n u m b er of cycles/ bu rst) 16914 f = 3 8 khz, e e = 2 m w /m 2 max. en v elope d u ty cycle figure 10. sensitivity vs. ambient temperature figure 11. relative spectral sensitivity vs. wavelength figure 12. directivity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 - 30 - 15 0 15 30 45 60 75 90 t am b - am b ient temperat u re (c) 1691 8 sensiti v ity in dark am b ient e - threshold irradiance (m w /m2) e min 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 750 8 50 950 1050 1150 1 8 99 8 - w a v elength (nm) s( ) - relati v e spectral sensiti v ity rel 96 12223p2 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 30 10 20 40 50 60 70 8 0 1.0 0. 8 0.7 d rel - relati v e transmission distance
tsop21..uh1f document number 81583 rev. 1.0, 20-nov-06 vishay semiconductors www.vishay.com 5 suitable data format the circuit of the tsop21..uh1f is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. a bandpass filter, an integrator stage and an automatic gain control are used to suppress such disturbances. the distinguishing mark between data signal and dis- turbance signal are carrier frequency, burst length and duty cycle. the data signal s hould fulfill the following conditions: ? carrier frequency should be close to center fre- quency of the bandpass (e.g. 38 khz). ? burst length should be 6 cycles/burst or longer. ? after each burst which is between 6 cycles and 70 cycles a gap time of at least 10 cycles is necessary. ? for each burst which is longer than 1.8 ms a corre- sponding gap time is necessary at some time in the data stream. this gap time should have at least same length as the burst. ? up to 2200 short bursts per second can be received continuously. some examples for suitable data format are: nec code, toshiba micom format, sharp code, rc5 code, rc6 code, rcmm code, r-2000 code, recs-80 code. when a disturbance signal is applied to the tsop21..uh1f it can still receive the data signal. however the sensitivity is re duced to that level that no unexpected pulses will occur. some examples for such disturbance signals which are suppressed by the tsop21..uh1f are: ? dc light (e.g. from tungsten bulb or sunlight) ? continuous signal at 38 khz or at any other fre- quency ? signals from fluorescent lamps with electronic bal- last (an example of the signal modulation is in the fig- ure below). figure 13. ir signal from fluores cent lamp with low modulation 0101520 time (ms) 16920 ir signal ir signal from fl u orescent lamp w ith lo w mod u lation 5
www.vishay.com 6 document number 81583 rev. 1.0, 20-nov-06 tsop21..uh1f vishay semiconductors package dimensions in mm 14434
tsop21..uh1f document number 81583 rev. 1.0, 20-nov-06 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of v ishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. v arious national and international initiatives are pressing for an earlier ban on these substances. v ishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. v ishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use v ishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify v ishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. v ishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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